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Author Notes:

Tianquan Lian, Email: tlian@emory.edu

H.Z. and X.-J.W. proposed the research direction. H.Z., X.-J.W., and T.L. supervised the project. L.Z., D.X., and J.C. carried out the synthesis of the materials. L.Z., Z.L., and D.X. performed HRTEM measurements. B.C., L.Z., Y.Y., C.C., Q.Z., Y.Z., P.W., and L.G. collected dark-field STEM and EDS elemental mapping data. L.Z., S.T.G., Y.L., X.H., and C.Z. performed steady-state and TA measurements. C.L. built the 3D model of the interface. H.Y., W.Z., X.L., C.-L.T., Z.G., and C.-S.L. contributed to XPS, SEM, and XRD characterization. L.M. and Y.D. analyzed synchrotron data. Y.G., L.L., Z.H., H.W., Y.D., and J.L. discussed the experimental results. L.Z., S.T.G., Y.L., T.L., X.-J.W., and H.Z. wrote the manuscript. All authors checked the manuscript and agreed with its content.

The authors declare no competing interests.

Subject:

Keywords:

  • Epitaxial growth
  • Ultrafast photonics

Epitaxial growth of highly symmetrical branched noble metal-semiconductor heterostructures with efficient plasmon-induced hot-electron transfer

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Journal Title:

Nature Communications

Volume:

Volume 14, Number 1

Publisher:

, Pages 2538-2538

Type of Work:

Article | Final Publisher PDF

Abstract:

Epitaxial growth is one of the most commonly used strategies to precisely tailor heterostructures with well-defined compositions, morphologies, crystal phases, and interfaces for various applications. However, as epitaxial growth requires a small interfacial lattice mismatch between the components, it remains a challenge for the epitaxial synthesis of heterostructures constructed by materials with large lattice mismatch and/or different chemical bonding, especially the noble metal-semiconductor heterostructures. Here, we develop a noble metal-seeded epitaxial growth strategy to prepare highly symmetrical noble metal-semiconductor branched heterostructures with desired spatial configurations, i.e., twenty CdS (or CdSe) nanorods epitaxially grown on twenty exposed (111) facets of Ag icosahedral nanocrystal, albeit a large lattice mismatch (more than 40%). Importantly, a high quantum yield (QY) of plasmon-induced hot-electron transferred from Ag to CdS was observed in epitaxial Ag-CdS icosapods (18.1%). This work demonstrates that epitaxial growth can be achieved in heterostructures composed of materials with large lattice mismatches. The constructed epitaxial noble metal-semiconductor interfaces could be an ideal platform for investigating the role of interfaces in various physicochemical processes.

Copyright information:

© The Author(s) 2023

This is an Open Access work distributed under the terms of the Creative Commons Attribution 4.0 International License (https://creativecommons.org/licenses/by/4.0/).
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